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零件编号	下载&订购	功能描述	制造商&上传企业
82N055	文件：319.92 Kbytes Page：10 Pages	MOS FIELD EFFECT TRANSISTOR DESCRIPTION TheNP82N055MUGandNP82N055NUGareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Nonlogiclevel •Superlowon-stateresistance RDS(on)=6.0mΩMAX.(VGS=10V,ID=41A) •Highcurrentrating ID(DC)=±82A •Low	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055CHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055CHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055CHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055CLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055CLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055DHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055DHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055DHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055DLE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055DLE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055EHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055EHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055EHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055ELE	文件：431.49 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID=41A) RDS(on)3=12mΩMAX.(VGS=4.5V,ID=41A) •Lowinputcapacitance Ciss=4	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055ELE	文件：226.05 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)1=8.4mΩMAX.(VGS=10V,ID=41A) RDS(on)2=11mΩMAX.(VGS=5.0V,ID	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055KHE	文件：214 Kbytes Page：10 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055KHE	文件：77.36 Kbytes Page：8 Pages	MOSFIELDEFFECTTRANSISTORSWITCHINGSWITCHING DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pF	NECRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055KHE	文件：5.67799 Mbytes Page：6 Pages	ProductScoutAutomotive	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司
NP82N055KHE	文件：421.05 Kbytes Page：12 Pages	MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET FEATURES •Channeltemperature175degreerated •Superlowon-stateresistance RDS(on)=8.6mΩMAX.(VGS=10V,ID=41A) •Lowinputcapacitance Ciss=3500pFTYP. •Built-ingateprotectiondiode	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市百视威讯电子科技有限公司	82N055		23+	N/A	36400	正品授权货源可靠	询价
深圳兆威电子有限公司	82N055	VB	2019	SOT-263	55000	绝对原装正品假一罚十!	询价
深圳市宏捷佳电子科技有限公司	82N055	NEC	23+	SOT-263	53200	全新原装真实库存含13点增值税票!	询价
深圳市国宇半导体科技有限公司	82N055	NEC	23+	SOT-263	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	82N055	NEC	22+	SOT-263	6000	十年配单,只做原装	询价
深圳市汇莱威科技有限公司	82N055		NEC	TO-263	608900	原包原标签100%进口原装常备现货!	询价
深圳市创新迹电子有限公司	82N055	NEC	22+	SOT-263	25000	只做原装进口现货,专注配单	询价
深圳市九方航科技有限公司	82N055	VBSEMI	19+	SOT-263	29600	绝对原装现货,价格优势!	询价
深圳市威尔健半导体有限公司	82N055低压MOS管	NEC	23+	TO-263	50000	全新原装正品现货,支持订货	询价
深圳市创盛芯科技有限公司	82N055MOS(场效应管)	17	22+	TO-263	3000	原装现货假一赔十	询价

更多82N055供应商更新时间2024-4-28 11:36:00

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