丝印：821；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.57 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：821；Package：DFN1010-6L；20V P-Channel Enhancement Mode MOSFET

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Mechanical Data  Case : DFN1010-6L Package  Terminals : Solderable per M

文件：1.54289 Mbytes 页数：6 Pages

PANJIT

強茂

丝印：821；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：821；This specification applies to Wire Wound Power Inductors

文件：889.65 Kbytes 页数：8 Pages

LEIDITECH

雷卯电子

丝印：821；Package：SOT23-5；OPERATION INSTRUCTION

文件：1.5852 Mbytes 页数：16 Pages

COREBAI

芯佰微

丝印：821；Package：SOT23-5L；10MHz, Low Power, CMOS, Rail-to-Rail Operational Amplifier

文件：343.96 Kbytes 页数：11 Pages

E-CMOS

飞虹高科

丝印：821；Package：QFN-12；Low Noise Amplifier with Bypass Switch

文件：925.81 Kbytes 页数：42 Pages

恩XP

丝印：821；SLIM INDUCTOR-RoHS

文件：289.89 Kbytes 页数：3 Pages

FENGJUI

峰瑞科技

丝印：821；SLIM INDUCTOR-RoHS

文件：176.25 Kbytes 页数：6 Pages

FENGJUI

峰瑞科技

丝印：821；SLIM INDUCTOR-RoHS

文件：176.25 Kbytes 页数：6 Pages

FENGJUI

峰瑞科技