800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K4P7；Package：PG-TO220FullPAK；800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌

丝印：80R1K4P7；Package：ThinPAK5x6SMD；800V CoolMOS짧 P7 Power Device

MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

文件：1.80902 Mbytes 页数：13 Pages

INFINEON

英飞凌

800V CoolMOS짧 P7 Power Transistor

Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V •IntegratedZenerDiodeESDprotection •Best-in-classCoolMOS™qualityandreliability;qualifiedforindustrial gradeapplicationsaccordingtoJEDEC(J-STD20a

文件：971.82 Kbytes 页数：13 Pages

INFINEON

英飞凌

800V CoolMOS짧 P7 Power Transistor

文件：995.22 Kbytes 页数：13 Pages

INFINEON

英飞凌

800V CoolMOS짧 P7 Power Device

MOSFET 800V CoolMOSª P7 Power Device The latest 800V CoolMOS™ P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon’s over 18 years pioneering super junction technology innovation.

文件：1.80902 Mbytes 页数：13 Pages

INFINEON

英飞凌