7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N-Channel Mosfet Transistor

文件：167.03 Kbytes 页数：2 Pages

ISC

无锡固电

600V, 7A N-channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.\n\nThis advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

ONSEMI

安森美半导体

HiPerFAST IGBT Lightspeed Series

Features • International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB • High frequency IGBT • High current handling capability • HiPerFASTTM HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • Uninterruptible power supplies (UPS) • Switc

文件：79.19 Kbytes 页数：2 Pages

IXYS

艾赛斯

N-CHANNEL POWER MOSFET

文件：2.48283 Mbytes 页数：8 Pages

SUNMATE

森美特

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 页数：2 Pages

CHONGQING

平伟实业