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7C132-35

2Kx8 Dual-Port Static RAM

Functional Description The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and CY7C136A can be used as either a standalone 8-bit dual-port static

文件:339.21 Kbytes 页数:18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C132-45

2Kx8 Dual-Port Static RAM

Functional Description The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and CY7C136A can be used as either a standalone 8-bit dual-port static

文件:339.21 Kbytes 页数:18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C132-55

2Kx8 Dual-Port Static RAM

Functional Description The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and CY7C136A can be used as either a standalone 8-bit dual-port static

文件:339.21 Kbytes 页数:18 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1351-40

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

文件:185.25 Kbytes 页数:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1351-50

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

文件:185.25 Kbytes 页数:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1351-66

128Kx36 Flow-Through SRAM with NoBL TM Architecture

Functional Description The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required

文件:185.25 Kbytes 页数:13 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1359A-100

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1359A-133

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1359A-150

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

7C1359A-166

256K x 18 Synchronous-Pipelined Cache Tag RAM

Functional Description The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high valued resistors. Features • Fast match times: 3.5, 3.8,

文件:237.24 Kbytes 页数:24 Pages

CYPRESSCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

产品属性

  • 产品编号:

    RCLAMP3371ZCTFT

  • 制造商:

    Semtech Corporation

  • 类别:

    电路保护 > TVS - 二极管

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 类型:

    齐纳

  • 电压 - 反向断态(典型值):

    3.3V(最大)

  • 电压 - 击穿(最小值):

    5.5V

  • 不同 Ipp 时电压 - 箝位(最大值):

    7V

  • 电流 - 峰值脉冲 (10/1000µs):

    9A(8/20µs)

  • 功率 - 峰值脉冲:

    65W

  • 电源线路保护:

    无

  • 应用:

    HDMI,USB

  • 不同频率时电容:

    0.23pF @ 1MHz

  • 工作温度:

    -40°C ~ 85°C(TA)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    0201(0603 公制)

  • 供应商器件封装:

    SLP0603P2X3J

  • 描述:

    1-LINE 3.3V 0.25PF ESD SLP0603P2

供应商型号品牌批号封装库存备注价格
SEMTECH
23+
DFN0603
50000
全新原装正品现货,支持订货
询价
SEMTECH
1808+
DFN0603
28447
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
5316
原装现货
询价
SEMTECH
25+
SLP0603
18000
原装正品 有挂有货 假一赔十
询价
SEMTECH
24+
con
10000
查现货到京北通宇商城
询价
Semtech(商升特)
2511
36000
电子元器件采购降本 30%!原厂直采,砍掉中间差价
询价
Semtech(商升特)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
询价
CNNPCHIP/新晶微/RS
2026+PB
DFN0603-2L
90000
全新Cnnpchip
询价
SXSEMI
26+
DFN0603
900000
原装进口特价
询价
SEMTECH
26+
原封原封original
136000
RCLAMP3371ZCTNTESD Suppressor Diode TVS Bi-Dir 3.3
询价
更多7C供应商 更新时间2026-11-1 13:01:00