丝印：7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

文件：304.6 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Features • N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • ESD Protected up to 1kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Stand

文件：304.6 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：7A；Package：SOT-23；Silicon PNP General Purpose Transistors

Features  Silicon PNP Epitaxial type  Excellent DC current gain characteristics  General purpose amplifier application  AEC-Q101 qualified  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard  NPN complement: BC817-AU series

文件：542.91 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：7A；Package：TSSOP6；45 V, 100 mA NPN/NPN matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：237.54 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：7A；Package：TSSOP6；45 V, 100 mA NPN/NPN matched double transistor

Features and benefits • Low collector capacitance • Low collector-emitter saturation voltage • Current gain matching • Base-emitter voltage matching • Drop-in replacement for standard double transistors • No mutual interference between the transistors • High-temperature applications up to 1

文件：238.67 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：7A；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：7A；Package：DFN1006BD-2；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Total power dissipation: ≤ 365 mW • Tolerance series: approximately ± 5 • Workin

文件：257.07 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：7A；Package：SOT23；40 V, 200 mA NPN switching transistor

1. General description NPN switching transistor in a small SOT23 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: MMBT3906 2. Features and benefits • Collector current capability IC = 200 mA • Collector-emitter voltage VCEO = 40 V • Qualified according to AEC-Q101 and

文件：213.15 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：7A；Package：SC-70；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-in bias resistors •Simplified circuit design •Reduction of component count •Reduced pick and place costs. APPLICATIONS •General purpose switching and amplification •Inverter and interface circuits •Circuit driver.

文件：401.94 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：7A；Package：SOD-323；Surface Mount Glass Passivated Standard Rectifier

文件：352.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微