10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET

• Ultra Low On-Resistance\n• Simulation Models\n• Peak Current vs Pulse Width Curve\n• Switching Time vs RGS Curves;

Renesas

瑞萨

丝印：76609D；Package：TO-252；100 VN-Channel MOSFET

Features • Ultra Low On-Resistance • Simulation Models • Temperature Compensated PSPICE® and SABER™ • Electrical Models • Spice and SABER Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves • VDS=100V • RDS(ON) (at VGS=10V)

文件：440.78 Kbytes 页数：7 Pages

UMW

友台半导体

100 VN-Channel MOSFET

Features • Ultra Low On-Resistance • Simulation Models • Temperature Compensated PSPICE® and SABER™ • Electrical Models • Spice and SABER Thermal Impedance Models • Peak Current vs Pulse Width Curve • UIS Rating Curve • Switching Time vs RGS Curves • VDS=100V • RDS(ON) (at VGS=10V)

文件：440.78 Kbytes 页数：7 Pages

UMW

友台半导体

N/A

grayhill

上传：深圳市跃创芯科技有限公司

N/A

grayhill

上传：深圳市跃创芯科技有限公司