60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the • 60A, 55V\n• Simulation Models\n   - Temperature Compensated PSPICE® and SABER™ Models\n   - SPICE and SABER Thermal Impedance Models\n      Available on the WEB at: www.fairchildsemi.com\n• Peak Current vs Pulse Width Curve\n• UIS Rating Curve\n• Related Literature\n   - TB334, “Guidelines for Sol;

ONSEMI

安森美半导体

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