Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

文件：75.59 Kbytes 页数：6 Pages

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QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

文件：164.67 Kbytes 页数：8 Pages

STMICROELECTRONICS

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Quad 2-Input NOR Gate

文件：291.62 Kbytes 页数：9 Pages

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Quad 2-Input NOR Gate

文件：551.06 Kbytes 页数：6 Pages

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Quad 2-Input NOR Gate

文件：99.16 Kbytes 页数：7 Pages

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仙童半导体

Quad 2-Input NOR Gate

General Description The VHC02 is an advanced high-speed CMOS 2-Input NOR Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stage

文件：75.59 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

QUAD 2-INPUT NOR GATE

DESCRIPTION The 74VHC02 is an advanced high-speed CMOS QUAD 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. ■ HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V ■ LOW POWER DISSIPATION: ICC = 2 µA (MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH =

文件：164.67 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Quad 2-Input NOR Gate

文件：551.06 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Quad 2-Input NOR Gate

文件：291.62 Kbytes 页数：9 Pages

FAIRCHILD

仙童半导体

Quad 2-Input NOR Gate

文件：99.16 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体