TRIPLE 3-INPUT AND GATE

DESCRIPTION The 74LVQ11 is a low voltage CMOS TRIPLE 3-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which ena

文件：157.26 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT AND GATE

DESCRIPTION The 74LVQ11 is a low voltage CMOS TRIPLE 3-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which ena

文件：157.26 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT AND GATE

DESCRIPTION The 74LVQ11 is a low voltage CMOS TRIPLE 3-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which ena

文件：157.26 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

TRIPLE 3-INPUT AND GATE

DESCRIPTION The 74LVQ11 is a low voltage CMOS TRIPLE 3-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It is ideal for low power and low noise 3.3V applications. The internal circuit is composed of 3 stages including buffer output, which ena

文件：157.26 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体