74LVC2G32GX集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC2G32GX
参数属性	74LVC2G32GX 封装/外壳为8-XFDFN 裸露焊盘；包装为卷带（TR）；类别为集成电路（IC）的门反相器；产品描述：IC GATE OR 2CH 2-INP 8X2SON
功能描述	Dual 2-input OR gate
丝印标识	VG
封装外壳	SOT1233-2 / 8-XFDFN 裸露焊盘
文件大小	287.18 Kbytes
页面数量	18 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-27 17:41:00
人工找货	74LVC2G32GX价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC2G32 is a dual 2-input OR gate. Inputs can be driven from either 3.3 V or 5 V devices.

This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• Overvoltage tolerant inputs to 5.5 V

• High noise immunity

• CMOS low power dissipation

• 5 V tolerant outputs in the Power-down mode

• ±24 mA output drive (VCC = 3.0 V)

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• JESD36 (4.5 V to 5.5 V)

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C