74LVC2G00GT集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74LVC2G00GT
参数属性	74LVC2G00GT 封装/外壳为8-XFDFN；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC GATE NAND 2CH 2-INP 8XSON
功能描述	Dual 2-input NAND gate
丝印标识	V00
封装外壳	SOT833-1 / 8-XFDFN
文件大小	302.44 Kbytes
页面数量	20 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-5 12:00:00
人工找货	74LVC2G00GT价格和库存，欢迎联系客服免费人工找货

1. General description

The 74LVC2G00 is a dual 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V

devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V

environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device is fully specified for partial power down applications using IOFF. The IOFF circuitry

disables the output, preventing the potentially damaging backflow current through the device when

it is powered down.

2. Features and benefits

• Wide supply voltage range from 1.65 V to 5.5 V

• 5 V tolerant outputs for interfacing with 5 V logic

• High noise immunity

• ±24 mA output drive (VCC = 3.0 V)

• CMOS low power dissipation

• IOFF circuitry provides partial Power-down mode operation

• Complies with JEDEC standard:

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8-B/JESD36 (2.7 V to 3.6 V)

• Latch-up performance exceeds 250 mA

• Direct interface with TTL levels

• Overvoltage tolerant inputs to 5.5 V

• ESD protection:

• HBM JESD22-A114F exceeds 2000 V

• MM JESD22-A115-A exceeds 200 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C