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74LV132D-Q100数据手册集成电路(IC)的门反相器规格书PDF

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厂商型号

74LV132D-Q100

参数属性

74LV132D-Q100 封装/外壳为14-SOIC(0.154",3.90mm 宽);包装为卷带(TR);类别为集成电路(IC)的门反相器;产品描述:IC GATE NAND SCHMIT 4CH 2IN 14SO

功能描述

Quad 2-input NAND Schmitt trigger

封装外壳

14-SOIC(0.154",3.90mm 宽)

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-9 14:20:00

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74LV132D-Q100规格书详情

描述 Description

The 74LV132-Q100 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC132-Q100 and 74HCT132-Q100.
The 74LV132-Q100 contains four 2‑input NAND gates which accept standard input signals. These gates are capable of transforming slowly changing input signals into sharply defined, jitter-free output signals.
The gate switches at different points for positive and negative-going signals. The difference between the positive voltage VT+ and the negative voltage VT- is defined as the input hysteresis voltage VH.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

特性 Features

• Automotive product qualification in accordance with AEC-Q100 (Grade 1)
• Specified from -40°C to +85°C and from -40°C to +125°C

• Wide operating voltage: 1.0 V to 5.5 V
• Optimized for low voltage applications: 1.0 V to 3.6 V
• Accepts TTL input levels between VCC = 2.7 V and VCC = 3.6V
• Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25°C
• Typical HIGH-level output voltage (VOH) undershoot: > 2V at VCC = 3.3V and Tamb = 25°C
• ESD protection:
• MIL-STD-883, method 3015 exceeds 2000 V
• HBM JESD22-A114F exceeds 2000 V
• MM JESD22-A115-A exceeds 200 V (C = 200pF, R = 0Ω)

• Multiple package options

应用 Application

• Wave and pulse shapers for highly noisy environments
• Astable multivibrators
• Monostable multivibrators

技术参数

  • 制造商编号

    :74LV132D-Q100

  • 生产厂家

    :Nexperia

  • VCC (V)

    :1.0 - 5.5

  • Logic switching levels

    :TTL

  • Output drive capability (mA)

    :± 12

  • tpd (ns)

    :10

  • fmax (MHz)

    :30

  • Nr of bits

    :4

  • Power dissipation considerations

    :low

  • Tamb (°C)

    :-40~125

  • Rth(j-a) (K/W)

    :92

  • Ψth(j-top) (K/W)

    :9.8

  • Rth(j-c) (K/W)

    :50

  • Package name

    :SO14

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Nexperia/安世
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