首页 >74FCT3573SO>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCH FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusing machinemodel(C=200pF,R=0) •VCC=3.3V±0.3V,NormalRange •VCC=2.7Vto3.6V,ExtendedRange •CMOSpowerlevels(0.4μWtyp.static) •Rail-to-Railoutputswingforincreasednoisemarg | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
3.3VCMOSOCTALTRANSPARENTLATCHES DESCRIPTION: TheFCT3573/AareoctaltransparentlatchesbuiltusinganadvanceddualmetalCMOStechnology. Theseoctallatcheshave3-stateoutputsandareintendedforbusorientedapplications. FEATURES: •0.5MICRONCMOSTechnology •ESD>2000VperMIL-STD-883,Method3015;>200Vusin | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IDT |
2021+ |
SOP |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
IDT |
23+ |
3880 |
正品原装货价格低qq:2987726803 |
询价 | |||
5000 |
公司存货 |
询价 | |||||
IDT |
22+ |
SSOP |
2987 |
绝对全新原装现货供应! |
询价 | ||
IDT |
1948+ |
SMD |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
IDT |
2023+环保现货 |
SSOP |
3 |
专注军工、汽车、医疗、工业等方案配套一站式服务 |
询价 | ||
IDT |
23+ |
SMD |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
IDT-集成器 |
24+25+/26+27+ |
SMD-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IDT |
23+ |
SMD |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
IDT |
2022 |
TSSOP-20 |
2600 |
原装现货,诚信经营! |
询价 |
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