64-Bit Random Access Memory with TRI-STATEE Outputs

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国半

64-bit TTL bipolar RAM, inverting (3-State)

DESCRIPTION\nThe 74F189A is a high speed, 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever the chip enable (CE) is high. The outputs are active only in the READ mode (WE= •High speed performance\n•Address access time: 8ns max vs 28ns for 74F189\n•Schottky clamp TTL\n•Inverting outputs (for non-inverting outputs see 74F219A)\n•74F189A in 150 mil wide SO is preferred options for new designs;

恩XP

Package：16-DIP（0.300"，7.62mm）；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC RAM 64B PARALLEL 16DIP

ONSEMI

安森美半导体

Package：16-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT） 类别：集成电路（IC） 存储器 描述：IC RAM 64B PARALLEL 16SOIC

ONSEMI

安森美半导体