74AUP1T02GX集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74AUP1T02GX
参数属性	74AUP1T02GX 封装/外壳为4-XFDFN 裸露焊盘；包装为管件；类别为集成电路（IC）的门反相器；产品描述：IC GATE NOR 1CH 2IN 5X2SON
功能描述	Low-power 2-input NOR gate with voltage-level translator
丝印标识	5F
封装外壳	SOT1226-3 / 4-XFDFN 裸露焊盘
文件大小	233.73 Kbytes
页面数量	13 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-8-3 15:13:00
人工找货	74AUP1T02GX价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP1T02 provides the single 2-input NOR function. This device ensures a very low static

and dynamic power consumption across the entire VCC range from 2.3 V to 3.6 V.

The 74AUP1T02 is designed for logic-level translation applications with input switching levels that

accept 1.8 V low-voltage CMOS signals, while operating from either a single 2.5 V or 3.3 V supply

voltage.

The wide supply voltage range ensures normal operation as battery voltage drops from 3.6 V to

2.3 V.

This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry

disables the output, preventing the damaging backflow current through the device when it is

powered down.

Schmitt trigger inputs make the circuit tolerant to slower input rise and fall times across the entire

VCC range.

2. Features and benefits

• Wide supply voltage range from 2.3 V to 3.6 V

• High noise immunity

• Low static power consumption; ICC = 1.5 μA (maximum)

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Inputs accept voltages up to 3.6 V

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial power-down mode operation

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• CDM JESD22-C101E exceeds 1000 V

• Specified from -40 °C to +85 °C and -40 °C to +125 °C