74AUP1GU04GM集成电路（IC）的门反相器规格书PDF中文资料

厂商型号	74AUP1GU04GM
参数属性	74AUP1GU04GM 封装/外壳为6-XFDFN；包装为卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带；类别为集成电路（IC）的门反相器；产品描述：IC INVERTER 1CH 1-INP 6XSON
功能描述	Low-power unbuffered inverter
丝印标识	pD
封装外壳	SOT886 / 6-XFDFN
文件大小	281.55 Kbytes
页面数量	18 页
生产厂商	NEXPERIA
中文名称	安世
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-15 11:30:00
人工找货	74AUP1GU04GM价格和库存，欢迎联系客服免费人工找货

1. General description

The 74AUP1GU04 is a single unbuffered inverter. Schmitt-trigger action at all inputs makes the

circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic

power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified

for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the

potentially damaging backflow current through the device when it is powered down.

2. Features and benefits

• Wide supply voltage range from 0.8 V to 3.6 V

• High noise immunity

• CMOS low power dissipation

• Low static power consumption; ICC = 0.9 μA (maximum)

• Low noise overshoot and undershoot < 10 of VCC

• IOFF circuitry provides partial Power-down mode operation

• Latch-up performance exceeds 100 mA per JESD 78 Class II

• Overvoltage tolerant inputs to 3.6 V

• Complies with JEDEC standards:

• JESD8-12 (0.8 V to 1.3 V)

• JESD8-11 (0.9 V to 1.65 V)

• JESD8-7 (1.65 V to 1.95 V)

• JESD8-5 (2.3 V to 2.7 V)

• JESD8C (2.7 V to 3.6 V)

• ESD protection:

• HBM JESD22-A114F Class 3A exceeds 5000 V

• MM JESD22-A115-A exceeds 200 V

• CDM JESD22-C101E exceeds 1000 V

• Multiple package options

• Specified from -40 °C to +85 °C and -40 °C to +125 °C