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74AUP1G79GS数据手册集成电路(IC)的触发器规格书PDF

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厂商型号

74AUP1G79GS

参数属性

74AUP1G79GS 封装/外壳为6-XFDFN;包装为卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带;类别为集成电路(IC)的触发器;产品描述:IC FF D-TYPE SNGL 1BIT 6XSON

功能描述

Low-power D-type flip-flop; positive-edge trigger

封装外壳

6-XFDFN

制造商

Nexperia Nexperia B.V. All rights reserved

中文名称

安世 安世半导体(中国)有限公司

数据手册

下载地址下载地址二

更新时间

2025-8-7 18:25:00

人工找货

74AUP1G79GS价格和库存,欢迎联系客服免费人工找货

74AUP1G79GS规格书详情

描述 Description

The 74AUP1G79 provides the single positive-edge triggered D-type flip-flop. Information on the data input is transferred to the Q output on the LOW-to-HIGH transition of the clock pulse. TheDinput must be stable one setup time prior to the LOW-to-HIGH clock transition for predictable operation.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

特性 Features

• Wide supply voltage range from 0.8 V to 3.6 V
• High noise immunity
• Complies with JEDEC standards:
• JESD8-12 (0.8 V to 1.3 V)
• JESD8-11 (0.9 V to 1.65 V)
• JESD8-7 (1.2 V to 1.95 V)
• JESD8-5 (1.8 V to 2.7 V)
• JESD8-B (2.7 V to 3.6 V)

• ESD protection:
• HBM JESD22-A114F Class 3A exceeds 5000 V
• MM JESD22-A115-A exceeds 200 V
• CDM JESD22-C101E exceeds 1000 V

• Low static power consumption; ICC = 0.9 μA (maximum)
• Latch-up performance exceeds 100 mA per JESD 78 Class II
• Inputs accept voltages up to 3.6 V
• Low noise overshoot and undershoot < 10 % of VCC
• IOFF circuitry provides partial power-down mode operation
• Multiple package options
• Specified from -40 °C to +85 °C and -40 °C to +125 °C

技术参数

  • 制造商编号

    :74AUP1G79GS

  • 生产厂家

    :Nexperia

  • VCC (V)

    :0.8 - 3.6

  • Logic switching levels

    :CMOS

  • Output drive capability (mA)

    :± 1.9

  • tpd (ns)

    :9.1

  • fmax (MHz)

    :400

  • Power dissipation considerations

    :ultra low

  • Tamb (°C)

    :-40~125

  • Rth(j-a) (K/W)

    :321

  • Ψth(j-top) (K/W)

    :28.7

  • Rth(j-c) (K/W)

    :215

  • Package name

    :XSON6

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