丝印：7410；Package：DFN-83x3；30V N-Channel MOSFET

General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. Features VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON)

文件：201.96 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器