丝印：741；Package：SOT23-5L；Super Low Power, CMOS, Rail-to-Rail Operational Amplifier

文件：858.07 Kbytes 页数：15 Pages

E-CMOS

飞虹高科

丝印：741A；Package：DO-214AC；Silicon Planar Zener Diodes

FEATURES ♦ Total power dissipation: Max. 1 W. ♦ Wide zener reverse voltage range 3.3V to 330V. ♦ Small plastic package suitable for surface mounted design. ♦ Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA ♦ Case: DO-214AC/SMA ♦ Terminals: Solderable per MIL-STD-750,

文件：413.63 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：741A；Package：SMA；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 1 W. • Wide zener reverse voltage range 3.3V to 330V. • Small plastic package suitable for surface mounted design. MECHANICAL DATA • Case: SMA • Terminals: Solderable per MIL-STD-750, Method 2026 • Approx. Weight: 0.055g / 0.002oz

文件：339.05 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：7410；Package：DFN-83x3；30V N-Channel MOSFET

General Description The AON7410 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC - DC converters and Load Switch applications. Features VDS (V) = 30V ID = 24A (VGS = 10V) RDS(ON)

文件：201.96 Kbytes 页数：6 Pages

AOSMD

万国半导体

丝印：74180E；Package：LFPAK56；N-channel 80 V, 41 mΩ standard level MOSFET in LFPAK56

1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • Q101 compliant • Repetitive

文件：765.73 Kbytes 页数：13 Pages

NEXPERIA

安世

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器

丝印：74104MA；Package：SOIC；SM74104 High Voltage Half-Bridge Gate Driver with Adaptive Delay

1 Features 1• Renewable Energy Grade • Drives both a High Side and Low Side N-Channel MOSFET • Adaptive Rising and Falling Edges with Programmable Additional Delay • Single Input Control • Bootstrap Supply Voltage Range up to 118V DC • Fast Turn-Off Propagation Delay (25 ns Typical) • Dri

文件：1.04492 Mbytes 页数：30 Pages

TI

德州仪器