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71V2576YS133BQI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS133PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS133PFI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150BG

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150BGI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150BQ

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150BQI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150PF

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YS150PFI

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

71V2576YSA133BG

128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect

Features ◆ 128K x 36, 256K x 18 memory configurations ◆ Supports high system speed: Commercial and Industrial: – 150MHz 3.8ns clock access time – 133MHz 4.2ns clock access time ◆ LBO input selects interleaved or linear burst mode ◆ Self-timed write cycle with global write control (GW), byte

文件:822.05 Kbytes 页数:23 Pages

RENESAS

瑞萨

供应商型号品牌批号封装库存备注价格
IS
TQFP
14
询价
IDT,
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
IDT
24+
QFP
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
INTEGRATED DEVICE TECHNOLOGY
2022+
原厂原包装
8600
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IDT
23+
QFP
5000
专注配单,只做原装进口现货
询价
24+
N/A
60000
一级代理-主营优势-实惠价格-不悔选择
询价
IDT
23+
QFP
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
ALCATEL
16+
TSOP32
4000
进口原装现货/价格优势!
询价
IDT/RENESAS
22+
PPG64
24500
瑞萨全系列在售
询价
ALCATEL
25+
TSOP32
6500
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
更多71V2576供应商 更新时间2025-12-26 13:01:00