首页 >70V3589S133BFI>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
70V3589S133BFI | HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
70V3589S133BFI | 包装:托盘 封装/外壳:208-LFBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 2MBIT PARALLEL 208CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | |
HIGH-SPEED 3.3V 128/64K x 36 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
包装:托盘 封装/外壳:208-LFBGA 类别:集成电路(IC) 存储器 描述:IC SRAM 2MBIT PARALLEL 208CABGA | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGH-SPEED3.3VSYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAM | IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司 | IDT | ||
HIGH-SPEED3.3V128/64Kx36SYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3VOR2.5VINTERFACE Features: ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speeddataaccess –Commercial:3.6ns(166MHz)/4.2ns(133MHz)(max.) –Industrial:4.2ns(133MHz)(max.) ◆SelectablePipelinedorFlow-Throughoutputmode ◆Counterenableandrepeat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS |
产品属性
- 产品编号:
70V3589S133BFI
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
SRAM
- 技术:
SRAM - 双端口,同步
- 存储容量:
2Mb(64K x 36)
- 存储器接口:
并联
- 电压 - 供电:
3.15V ~ 3.45V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
208-LFBGA
- 供应商器件封装:
208-CABGA(15x15)
- 描述:
IC SRAM 2MBIT PARALLEL 208CABGA
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨) |
23+ |
208-CABGA (15.00L X 15.00W X 0 |
70 |
全新、原装 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
48-LFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
IDT, Integrated Device Technol |
21+ |
208-CABGA(15x15) |
56200 |
一级代理/放心采购 |
询价 | ||
RENESAS(瑞萨)/IDT |
1921+ |
CABGA-208(15x15) |
3575 |
向鸿仓库现货,优势绝对的原装! |
询价 | ||
IDT |
1931+ |
N/A |
1186 |
加我qq或微信,了解更多详细信息,体验一站式购物 |
询价 | ||
RENESAS(瑞萨)/IDT |
2117+ |
CABGA-208(15x15) |
315000 |
7个/托盘一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
IDT |
20+ |
BGA-208 |
14 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
RENESAS(瑞萨)/IDT |
2021+ |
CABGA-208(15x15) |
499 |
询价 | |||
RENESAS(瑞萨电子) |
22+ |
NA |
500000 |
万三科技,秉承原装,购芯无忧 |
询价 | ||
IDT |
22+ |
NA |
1186 |
加我QQ或微信咨询更多详细信息, |
询价 |
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