HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

Features ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location ◆ High-speed access – Commercial: 15/20ns (max.) – Industrial: 20ns (max.) ◆ Low-power operation – IDT70V18L Active: 440mW (typ.) Standby: 660μW (typ.) ◆ Dual chip enables allow for depth

文件：342 Kbytes 页数：19 Pages

RENESAS

瑞萨

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

HIGH-SPEED 3.3V 64K x 9 DUAL-PORT STATIC RAM

文件：641.11 Kbytes 页数：18 Pages

IDT

Package：100-LQFP；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 576KBIT PARALLEL 100TQFP

Renesas Electronics America Inc