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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
70T633S12BCI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BCI	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：256-LBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 256CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BCI8	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BCI8	文件：100 bytes Page：1 Pages	包装：托盘封装/外壳：256-LBGA 类别：集成电路（IC）存储器描述：IC SRAM 9MBIT PARALLEL 256CABGA	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BC	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BCG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BCG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BCGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BCGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BF	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFG	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFG	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI	文件：251.71 Kbytes Page：27 Pages	ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFGI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
70T633S12BFGI	文件：437.45 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
70T633S12BFI	文件：513.809 Kbytes Page：28 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Features ◆TrueDual-Portmemorycellswhichallowsimultaneous accessofthesamememorylocation ◆High-speedaccess –Commercial:10/12/15ns(max.) –Industrial:10/12ns(max.) ◆RapidWriteModesimplifieshigh-speedconsecutivewrite cycles ◆Dualchipenablesallowfordepthexpansion	RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司	RENESAS
IDT70T633S12BC	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT70T633S12BCI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT70T633S12BF	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT
IDT70T633S12BFI	文件：342.05 Kbytes Page：27 Pages	HIGH-SPEED2.5V512/256Kx18ASYNCHRONOUSDUAL-PORTSTATICRAMWITH3.3V0R2.5VINTERFACE Description TheIDT70T633/1isahigh-speed512/256Kx18AsynchronousDual-PortStaticRAM.TheIDT70T633/1isdesignedtobeusedasastand-alone9216/4608K-bitDual-PortRAMorasacombinationMASTER/SLAVEDual-PortRAMfor36-bit-or-morewordsystem.UsingtheIDTMASTER/SLAVEDual-PortRAM	IDTIntegrated Device Technology, Inc. 集成器深圳市集成器件技术有限公司	IDT

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产品属性

产品编号：
70T633S12BCI
制造商：
Renesas Electronics America Inc
类别：
集成电路（IC） > 存储器
包装：
托盘
存储器类型：
易失
存储器格式：
SRAM
技术：
SRAM - 双端口，异步
存储容量：
9Mb（512K x 18）
存储器接口：
并联
写周期时间 - 字，页：
12ns
电压 - 供电：
2.4V ~ 2.6V
工作温度：
-40°C ~ 85°C（TA）
安装类型：
表面贴装型
封装/外壳：
256-LBGA
供应商器件封装：
256-CABGA（17x17）
描述：
IC SRAM 9MBIT PARALLEL 256CABGA

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市鹏顺微电子科技有限公司	70T633S12BCI	RENESAS(瑞萨)/IDT	2022+原装正品	CABGA-256(17x17)	18000	支持工厂BOM表配单公司只做原装正品货	询价
深圳市毅创辉电子科技有限公司	70T633S12BCI	RENESAS(瑞萨)	23+	256-CABGA (17.00L X 17.00W X 1	60	全新、原装	询价
深圳市弘为电子有限公司	70T633S12BCI	IDT	2019	SMD	324554	原装进口现货	询价
深圳市斌腾达科技有限公司	70T633S12BCI	IDT, Integrated Device Technol	21+	165-LBGA	5280	进口原装!长期供应!绝对优势价格(诚信经营	询价
瀚佳科技(深圳)有限公司	70T633S12BCI	IDT, Integrated Device Technol	21+	256-CABGA(17x17)	56200	一级代理/放心采购	询价
深圳市芯祺盛科技有限公司	70T633S12BCI	RENESAS(瑞萨)/IDT	1921+	CABGA-256(17x17)	3575	向鸿仓库现货,优势绝对的原装!	询价
深圳市艾宇欣科技有限公司	70T633S12BCI	IDT	1931+	N/A	1186	加我qq或微信，了解更多详细信息,体验一站式购物	询价
艾睿国际（香港）有限公司	70T633S12BCI	RENESAS(瑞萨)/IDT	2117+	CABGA-256(17x17)	315000	6个/托盘一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市科雨电子有限公司	70T633S12BCI	IDT	20+	BGA-256	12	就找我吧!--邀您体验愉快问购元件!	询价
讯运(深圳/上海)电子有限公司	70T633S12BCI	RENESAS(瑞萨)/IDT	2021+	CABGA-256(17x17)	499		询价

更多70T633S12BCI供应商更新时间2024-4-30 15:00:00

产品属性

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