丝印：70T；0.6% ACCURACY LOW NOISE 300mA LDO REGULATOR

FEATURES • Supply Current Typ. 18A • Standby Current Typ. 0.1A • Dropout Voltage Typ. 0.13V (IOUT150mA, VOUT

文件：567.04 Kbytes 页数：33 Pages

NISSHINBO

日清纺微电子

丝印：70T；Package：SOT-23；LOW DROPOUT VOLTAGE REGULATOR

文件：114.97 Kbytes 页数：15 Pages

TOKO

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low vol

文件：75.45 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨

HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE

Features: ◆ True Dual-Port memory cells which allow simultaneous access of the same memory location ◆ High-speed data access – Commercial: 3.4 (200MHz)/3.6ns (166MHz)/ 4.2ns (133MHz)(max.) – Industrial: 4.2ns (133MHz) (max.) ◆ Selectable Pipelined or Flow-Through output mode ◆ Counter enab

文件：628.53 Kbytes 页数：28 Pages

RENESAS

瑞萨