FAN7005M

Marking：7005；Package：SOP-8；200mW Stereo Power Amplifier with Shutdown

Description TheFAN7005isadual,fullydifferentialaudiopoweramplifierdelivering200mW(typ.)ofcontinuouspowerintoan8Ωload.Whendriving200mWintoan8Ωloadfroma5Vpowersupply,theFAN7005haslessthan0.3ofTHD+Novertheentireaudiblefrequencyrange.Toreducethepowerco

FCX705

Marking：705；Package：SOT-89；120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR

DESCRIPTION ThisnewPNPDarlingtontransistorprovidesuserswithveryefficientperformancecombininglowVCE(sat)andveryhighHFEtogiveextremelylowonstatelossesat120Voperation.Thismakesitdealforuseinavarietyofefficientdrivingfunctionsincludingmotors,lampsrelaysand

IPA70R600P7S

Marking：70S600P7；Package：PG-TO220FullPAK；700V CoolMOS짧 P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications   RecommendedforFlybacktopologiesforexampleusedinChargers,   Adapters,LightingApplications,etc.

IPA70R750P7S

Marking：70S750P7；Package：PG-TO220FullPAK；700V CoolMOS짧 P7 Power Transistor

700VCoolMOSP7PowerTransistor Potentialapplications   RecommendedforFlybacktopologiesforexampleusedinChargers,   Adapters,LightingApplications,etc.

IPD70R1K4CE

Marking：70S1K4CE；Package：PG-TO252；700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications

IPD70R1K4P7S

Marking：70S1K4P7；Package：PG-TO252-3；700V CoolMOS짧 P7 Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsath

IPD70R360P7S

Marking：70S360P7；Package：PG-TO252-3；700V CoolMOS짧 P7 Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsath

IPD70R600P7S

Marking：70S600P7；Package：PG-TO252-3；700V CoolMOS짧 P7 Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsath

IPD70R900P7S

Marking：70S900P7；Package：PG-TO252-3；700V CoolMOS짧 P7 Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss •Excellentthermalbehavior •IntegratedESDprotectiondiode •Lowswitchinglosses(Eoss) •Productvalidationacc.JEDECStandard Benefits •Costcompetitivetechnology •Lowertemperature •HighESDruggedness •Enablesefficiencygainsath

IPD70R950CE

Marking：70S950CE；Package：PG-TO252；700V CoolMOS짧 CE Power Transistor

Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications