6N136VSLT1中文资料CTMICRO数据手册PDF规格书

描述 Description

The 6N135, 6N136, CT4502 and CT4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.

特性 Features

• High speed 1MBit/s

• High isolation voltage between input and output

(Viso=5000 Vrms )

• Guaranteed CTR performance from 0°C to 70°C

• Wide operating temperature range of -55°C to

100°C

• Regulatory Approvals

■ UL - UL1577 (E364000)

■ VDE - EN60747-5-5(VDE0884-5)

■ CQC – GB4943.1, GB8898

■ IEC60065, IEC60950

Applications

• Line receivers

• Telecommunication equipment

• High speed logic ground isolation

• Feedback loop in switch-mode power supplies

• Home appliances