Power MOSFETs

Features ● RF capable MOSFETs ● Double metal process for low gate resistance ● Rugged polysilicon gate cell structure ● Unclamped Inductive Switching (UIS) rated ● Low package inductance - easy to drive and to protect ● Fast intrinsic rectifier Applications ● DC-DC converters ● Switch

文件：820.74 Kbytes 页数：4 Pages

IXYS

艾赛斯

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

6A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 6N100-FC provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 4.0 Ω @ VGS=10V, ID=3.0A * Fast Switching Capability * Avalanche Energy Specified

文件：316.3 Kbytes 页数：9 Pages

UTC

友顺

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated

DESCRIPTION The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package. Signals can be transmitted between two electrically

文件：228.06 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 C Rated

DESCRIPTION The 6N1135 and 6N1136 are 110 °C rated optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photo detector which consists of a photo diode and a high-speed transistor in a DIP-8 plastic package. Signals can be transmitted between two electrically

文件：228.06 Kbytes 页数：10 Pages

VishayVishay Siliconix

威世威世科技公司