Package in 8mm tape on 7 diameter reels.

文件：722.96 Kbytes 页数：11 Pages

TO-GRACE

至恩科技

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

文件：104.65 Kbytes 页数：2 Pages

POSEICO

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

文件：87.96 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l

文件：89.27 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体