丝印：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDH

东海半导体

丝印：630；Package：SMT；GaAs HBT VECTOR MODULATOR 700 - 1000 MHz

文件：813.67 Kbytes 页数：8 Pages

AD

亚德诺

丝印：630；Package：SMT；GaAs HBT VECTOR MODULATOR 700 - 1000 MHz

文件：813.67 Kbytes 页数：8 Pages

AD

亚德诺

丝印：630A；Package：TO-220；N-Channel Enhancement Mode Power MOSFET

Description The 630AT uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：994.61 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：630A；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The G630J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：690.12 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：6308ACRZ；Package：40Ld6x6QFN；Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers

Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers The ISL6308A is a three-phase PWM control IC with integrated MOSFET drivers. It provides a precision voltage regulation system for multiple applications including, but not limited to, high current low voltage point-of-loa

文件：1.26624 Mbytes 页数：28 Pages

RENESAS

瑞萨

丝印：6308AIRZ；Package：40Ld6x6QFN；Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers

Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers The ISL6308A is a three-phase PWM control IC with integrated MOSFET drivers. It provides a precision voltage regulation system for multiple applications including, but not limited to, high current low voltage point-of-loa

文件：1.26624 Mbytes 页数：28 Pages

RENESAS

瑞萨

丝印：630PAQ；Package：VQFN-HR；LMR336x0AP-Q1 3.8-V to 36-V, 2-A and 3-A Synchronous Step-Down Voltage Converter

文件：4.8061 Mbytes 页数：48 Pages

TI

德州仪器

丝印：630PCQ；Package：VQFN-HR；LMR336x0AP-Q1 3.8-V to 36-V, 2-A and 3-A Synchronous Step-Down Voltage Converter

文件：4.8061 Mbytes 页数：48 Pages

TI

德州仪器

丝印：630；Package：TO-220C；9A 200V N-channel Enhancement Mode Power MOSFET

1 Description These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 2 Features ● Fast Switching ● Low ON Resistance(Rdso

文件：1.35377 Mbytes 页数：11 Pages

WXDH

东海半导体