丝印：61610N5HC；Package：PG-WHITFN-10-1；MOSFET OptiMOSTM5 Power-Transistor, 100 V

Features • Symmetrical Half Bridge • Optimized for low voltage drives and battery powered applications • Optimized for high performance SMPS • N-channel • Very low on-resistance RDS(on) • Superior thermal resistance • 100% avalanche tested • Pb-free lead plating; RoHS compliant • Halo

文件：1.03477 Mbytes 页数：11 Pages

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