5N120BND数据手册ONSEMI中文资料规格书

描述 Description

The HGTG5N120BND and HGTP5N120BND are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49308. The Diode used is the development type TA49058 (Part number RHRD6120).
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Formerly Developmental Type TA49306.

特性 Features

• 21A, 1200V, TC = 25°C
• 1200V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . 175ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Thermal Impedance SPICE Model
   Temperature Compensating SABER™ Model
   www.fairchildsemi.com
• Related Literature
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