丝印：5H；Package：SOT-23；Surface mount switching diode

FEATURES ● Fast switching speed. ● High conductance. ● For general purpose switching applications. ● Surface mount package ideally suited for automatic insertion. APPLICATIONS ● Small signal switching

文件：197.9 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：5H；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.21 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5H；Package：SC-70；80 V, 100 mA PNP resistor-equipped transistors

1. General description PNP Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN complement: NHDTA123JU 2.2 47 NHDTC123JU NHDTA143ZU 4.7 47 NHDTC143

文件：299.23 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5H；Package：SC-62；12 V, 5.3 A PNP low VCEsat (BISS) transistor

1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NX. 1.2 Features .. Low collector-emitter saturation voltage VCEsat .. High collector cur

文件：310.25 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：5H；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 22 k, R2 = 47 k

Features and benefits  Built-in bias resistors  Simplifies circuit design  Reduces component count  Reduces pick and place cost

文件：125.58 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：5H；Package：SOT23；28 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Very fast switching • AEC-

文件：286.49 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：5H；Package：WL-CSP-30B；Audio Amplifier with IV Sense

General Description The RT5510 is a boosted BTL class-D amplifier with V/I sensing. A built-in DC-DC step-up converter is used to provide efficient power for class-D amplifier with multi-level class-G operation. The digital audio interface supports I2S, left-justified, right-justified, TDM a

文件：2.75118 Mbytes 页数：52 Pages

RICHTEK

立锜科技

丝印：5H；Package：WDFN-8SL；3A, 1.2MHz, 6V Synchronous Step-Down Converter In WDFN-8L 2x2

General Description The RT5753A/B/C/D is a simple, easy-to-use, 3A synchronous step-down DC-DC converter with an input supply voltage range from 2.5V to 6V. The device builds in an accurate 0.6V reference voltage and integrates low RDS(ON) power MOSFETs to achieve high efficiency in WDFN-8L

文件：972.79 Kbytes 页数：28 Pages

RICHTEK

立锜科技

丝印：5H；Silicon planar zener diode in a small plastic

文件：896.36 Kbytes 页数：3 Pages

CHENDA

辰达半导体

丝印：5H；Package：SOD-123；Zener Diodes

文件：1.04178 Mbytes 页数：4 Pages

YFWDIODE

佑风微