ESD5V0D5/DC0521D5

Marking：5B；Package：SOD-523；5.0V ESD Protection Diode

Features Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunity testAirdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) ROHSCompliant

ESD5V0D5SLASHDC0521D5

Marking：5B；Package：SOD-523；5.0V ESD Protection Diode

Features Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:5V Lowclampingvoltage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunity testAirdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-5(Lightning)8A(8/20μs) ROHSCompliant

KST4123

Marking：5B；Package：SOT-23；General Purpose Transistor

GeneralPurposeTransistor

MM1Z10

Marking：5B；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MM1Z10

Marking：5B；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

PBSS301NX

Marking：5B；Package：SC-62；12 V, 5.3 A NPN low VCEsat (BISS) transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

PDTA144TE

Marking：5B；Package：SC-75；PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = open

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PESD4USB5BTBR-Q

Marking：5B；Package：DFN2510A-10；ESD protection for high-speed interfaces

1.Generaldescription ThisbidirectionalESDprotectiondeviceisdesignedtoprotecthigh-speedinterfacessuchas SuperSpeedUSB3.2at10Gbps,HDMI,DisplayPort,externalSerialAdvancedTechnology Attachment(eSATA),LowVoltageDifferentialSignaling(LVDS),andGigabitMultimediaSerial

PMBD6100

Marking：5B；Package：SOT23；High-speed double diode

FEATURES •SmallplasticSMDpackage •Highswitchingspeed:max.4ns •Generalapplication •Continuousreversevoltage:max.70V •Repetitivepeakreversevoltage:max.85V •Repetitivepeakforwardcurrent:max.450mA.

PMPB14XP

Marking：5B；Package：SOT1220；12 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe