FMMD6050

Marking：5A；Package：SOT-23；SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE

SOT23SILICONPLANARHIGHSPEEDSWITCHINGDIODE PARTMARKINGDETAIL-5A

MM1Z9V1

Marking：5A；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MM1Z9V1

Marking：5A；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MMDL6050

Marking：5A；Package：SOD-323；High speed switching diodes

FEATURES ●SmallSurfaceMountingType:SOD-323 ●HighSpeed:t=4.0nsTyp APPLICATIONS ●Highspeedswitching

NCS2250SN2T1G

Marking：5A；Package：TSOP-5；Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

TheNCS2250andNCS2252lowvoltagecomparatorsfeaturefast responsetimeandrail−to−railinputandoutput.Theextended commonmodeinputvoltagerangeallowsinputsignals200mVabove andbelowtherails,allowingvoltagedetectionatgroundorthesupply. Apropagationdelayof50nswit

NCV2250SN2T1G

Marking：5A；Package：TSOP-5；Comparator, High Speed, 50 ns, Low Voltage, Rail-to-Rail

TheNCS2250andNCS2252lowvoltagecomparatorsfeaturefast responsetimeandrail−to−railinputandoutput.Theextended commonmodeinputvoltagerangeallowsinputsignals200mVabove andbelowtherails,allowingvoltagedetectionatgroundorthesupply. Apropagationdelayof50nswit

PDTC123EE

Marking：5A；Package：SOT416；NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

FEATURES •Built-inbiasresistors •Simplifiedcircuitdesign •Reductionofcomponentcount •Reducedpickandplacecosts. APPLICATIONS •Generalpurposeswitchingandamplification •Inverterandinterfacecircuits •Circuitdriver.

PEMB14

Marking：5A；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 47 kW, R2 = open

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecost

PESD4USB5B-TBS

Marking：5A；Package：DFN2510D；ESD protection for high-speed interfaces

1.Generaldescription ThisbidirectionalESDprotectiondeviceisdesignedtoprotecthigh-speedinterfacessuchas SuperSpeedUSB3.2at10Gbps,HDMI,DisplayPort,externalSerialAdvancedTechnology Attachment(eSATA),LowVoltageDifferentialSignaling(LVDS),andGigabitMultimediaSerial

PMBD6050

Marking：5A；Package：SOT23；High-speed diode

FEATURES •SmallplasticSMDpackage •Highswitchingspeed:max.4ns •Continuousreversevoltage:max.70V •Repetitivepeakreversevoltage:max.85V •Repetitivepeakforwardcurrent:max.500mA. APPLICATIONS •High-speedswitchinginthickandthin-filmcircuits. DESCRIPTION ThePM