599PWC

5MM LED

BF599

EPITAXIALPLANARNPNTRANSISTOR

BF599

SurfacemountSi-EpitaxialPlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BF599

EPITAXIALPLANARNPNTRANSISTOR(HIGHFREQUENCY,VHFBANDAMPLIFIER)

HIGHFREQUENCYAPPLICATION. VHFBANDAMPLIFIERAPPLICATION.

BF599

NPNSiliconRFTransistor(CommonemitterIF/RFamplifierLowfeedbackcapacitanceduetoshielddiffusion)

NPNSiliconRFTransistor ●CommonemitterIF/RFamplifier ●Lowfeedbackcapacitanceduetoshielddiffusion

BF599

2SC3229

C599

250WATTS(AC)DC/DCSINGLEOUTPUT

250WATTS(AC)DC/DCSINGLEOUTPUT Features •SingleOutput •3Ux21(24)TEx166.5mm(24TEfor5Voutputs) •Weight1.7kg

J599

SWITCHINGP-CHANNELPOWERMOSFETINDUSTRIALUSE

DESCRIPTION The2SJ599isP-channelMOSFieldEffectTransistordesignedforsolenoid,motorandlampdriver. FEATURES •Lowon-stateresistance: RDS(on)1=75mΩMAX.(VGS=–10V,ID=–10A) RDS(on)2=111mΩMAX.(VGS=–4.0V,ID=–10A) •Lowinputcapacitance: Ciss=13

KTK599TV

NCHANNELJUNCTIONFIELDEFFECTTRANSISTORCONDENSERMICROPHONEAPPLICATION

CONDENSERMICROPHONEAPPLICATION FEATURES •SpeciallySuitedforUseinAudioandTelephone ElectretCapacitorMicrophones(ECM) •HighVoltageGain •HighESDVoltage •Ultra-SmallandThinSizePackage •Built-inTVS&10pFCapacitorbetweenOUTPUTtoGND IEC61000-4-2(ESD)15kV

LB599AD

High-voltageresonantcontroller

Devicedescription TheL6599isadouble-endedcontrollerspecificfortheresonanthalf-bridgetopology.Itprovides50complementarydutycycle:thehigh-sideswitchandthelow-sideswitcharedrivenON180°out-of-phaseforexactlythesametime. Outputvoltageregulationisobtainedbymodu