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5962F1422601V9AX中文资料PDF规格书

5962F1422601V9AX
厂商型号

5962F1422601V9AX

功能描述

Radiation Hardened 36V Quad Precision Low Power Operational Amplifier With Enhanced SET Performance

文件大小

1.32049 Mbytes

页面数量

22

生产厂商 Intersil Corporation
企业简称

Intersil瑞萨电子

中文名称

瑞萨电子株式会社官网

原厂标识
数据手册

下载地址一下载地址二

更新时间

2024-6-3 18:12:00

5962F1422601V9AX规格书详情

The ISL70419SEH contains four very high precision amplifiers

featuring the perfect combination of low noise vs power

consumption. Low offset voltage, low IBIAS current and low

temperature drift making them the ideal choice for applications

requiring both high DC accuracy and AC performance. The

combination of high precision, low noise, low power and small

footprint provides the user with outstanding value and flexibility

relative to similar competitive parts.

Applications for these amplifiers include precision active

filters, medical and analytical instrumentation, precision

power supply controls, and industrial controls.

The ISL70419SEH is offered in a 14 Ld hermetic ceramic

flatpack package. The device is offered in an industry standard

pin configuration and operates over the extended temperature

range from -55°C to +125°C.

Features

• Electrically screened to DLA SMD# 5962-14226

• Low input offset voltage. . . . . . . . . . . . . . . . . . . ±110µV, Max.

• Superb offset temperature coefficient. . . . . . . 1µV/°C, Max.

• Input bias current . . . . . . . . . . . . . . . . . . . . . . . . . ±15nA, Max.

• Input bias current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.

• Low current consumption . . . . . . . . . . . . . . . . . . . . . . . 440µA

• Voltage noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/Hz

• Wide supply range . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 36V

• Operating temperature range. . . . . . . . . . . .-55°C to +125°C

• Radiation environment

- SEB LETTH (VS = ±18V) . . . . . . . . . . . . . 86.4 MeV•cm2/mg

- SET recovery time . . . . . . . . . . ≤ 10µs at 60 MeV•cm2/m

- SEL immune (SOI process)

- Total dose HDR (50-300rad(Si)/s) . . . . . . . . . . 300krad(Si)

- Total dose LDR (10mrad(Si)/s) . . . . . . . . . . .100krad(Si) *

* Product capability established by initial characterization. The

EH version is acceptance tested on a wafer-by-wafer basis to

50krad(Si) at low dose rate.

Applications

• Precision instrumentation

• Spectral analysis equipment

• Active filter blocks

• Thermocouples and RTD reference buffers

• Data acquisition

• Power supply control

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