丝印：5962-8754903VCA；Package：CDIP；SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite paylo

文件：745.77 Kbytes 页数：16 Pages

TI

德州仪器

丝印：5962-8754903VCA；Package：CDIP；SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite paylo

文件：745.77 Kbytes 页数：16 Pages

TI

德州仪器

丝印：5962-8754903VCA；Package：CDIP；SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite paylo

文件：745.77 Kbytes 页数：16 Pages

TI

德州仪器

丝印：5962-8754903VCA；Package：CDIP；SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

1 Features • 5962R87549: – Radiation hardness assurance (RHA) up to TID 100 krad (Si) – SEL immune to 86 MeV×cm2/mg • 5962-87549: – Total ionizing dose 50 krad (Si) • 2 V to 6 V VCC operation • Inputs accept voltages to 6 V • Maximum tpd of 7 ns at 5 V 2 Applications • Satellite paylo

文件：745.77 Kbytes 页数：16 Pages

TI

德州仪器

SN54AC00-SP Radiation Hardened Quad 2 Input NAND Gate

文件：193.37 Kbytes 页数：10 Pages

TI

德州仪器