1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

文件：604.21 Kbytes 页数：16 Pages

ATMEL

爱特梅尔

1-Megabit (128K x 8) Paged Parallel EEPROMs

Description\nThe AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation • Fast Read Access Time - 120 ns\n• Fast Write Cycle Time\n• Low Power Dissipation\n• Hardware and Software Data Protection\n• High Reliability CMOS Technology\n• Single 5V ± 10% Supply\n• JEDEC Approved Byte-Wide Pinout ;

Microchip

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