5962-1123701VXC.A中文资料德州仪器数据手册PDF规格书

1FEATURES

• 20-ns Read, 13.8-ns Write Through Maximum

Access Time

• Functionally Compatible With Commercial

512K x 32 SRAM Devices

• Built-In EDAC (Error Detection and Correction)

to Mitigate Soft Errors

• Built-In Scrub Engine for Autonomous

Correction

• CMOS Compatible Input and Output Level,

Three State Bidirectional Data Bus

– 3.3 ±0.3-V I/O, 1.8 ±0.15-V CORE

• Radiation Performance (1)

– Uses Both Substrate Engineering and

Radiation Hardened by Design (HBD) (2)

– TID Immunity > 3e5 rad (Si)

– SER < 5e-17 Upsets/Bit-Day

(Core Using EDAC and Scrub) (3)

– Latch up immunity > LET = 110 MeV

(T = 398K)

• Available in a 76-Lead Ceramic Quad Flatpack

• Engineering Evaluation (/EM) Samples are

Available (4)

DESCRIPTION

The SMV512K32 is a high performance asynchronous CMOS SRAM organized as 524,288 words by 32 bits. It is

pin selectable between two modes: master or slave. The master device selection provides user defined

autonomous EDAC scrubbing options. The slave device selection employs a scrub on demand feature that can

be initiated by a master device. Three read cycles and four write cycles (described below) are available

depending on the user needs.