5962-1022101VSC.Z中文资料德州仪器数据手册PDF规格书

1 Features

1• 5962R10221:

– Radiation Hardness Assurance (RHA) up to

TID 100 krad (Si)

– ELDRS Free 100 krad (Si) – 10 mRAD(Si)/s

– Single Event Latchup (SEL) Immune to

LET = 85 MeV-cm2/mg (See Radiation Report)

– SEB and SEGR Immune to 85 MeV-cm2/mg,

SOA Curve Available (See Radiation Report)

– SET/SEFI Cross-Section Plot Available (See Radiation Report)

• Peak Efficiency: 95% (V O = 3.3 V)

• Integrated 55-mΩ/50-mΩ MOSFETs

• Split Power Rail: 1.6 to 6.3 V on PVIN

• Power Rail: 3 to 6.3 V on VIN

• 6-A Maximum Output Current

• Flexible Switching Frequency Options:

– 100-kHz to 1-MHz Adjustable Internal

Oscillator

– External Sync Capability: 100 kHz to 1 MHz

– Sync Pin can be Configured as a 500-kHz

Output for Master/Slave Applications

• 0.795-V ±1.258% Voltage Reference at 25°C

• Monotonic Start-Up into Prebiased Outputs

• Adjustable Soft Start Through External Capacitor burn•

Input Enable and Power-Good Output for Power

Sequencing

• Power Good Output Monitor for Undervoltage and

Overvoltage

• Adjustable Input Undervoltage Lockout (UVLO)

• 20-Pin Thermally-Enhanced Ceramic Flatpack

Package (HKH)

• See www.ti.com/swift for SWIFT™ Documentation

• See the Tools & Software Tab

2 Applications

• Space Satellite Point of Load Supply for FPGAs,

Microcontrollers, and ASICs

• Space Satellite Payloads

• Radiation-Tolerant Applications

• Available in Military (–55°C to 125°C)

Temperature Range

• Engineering Evaluation (/EM) Samples are

Available(1)

3 Description

The TPS50601-SP is a radiation hardened, 6.3-V, 6-

A synchronous step-down converter, which is

optimized for small designs through high efficiency

and integrating the high-side and low-side MOSFETs.

Further space savings are achieved through current

mode control, which reduces component count, and a high switching frequency, reducing the inductor's

footprint. The devices are offered in a thermally

enhanced 20-pin ceramic, dual in-line flatpack

package.