包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 预印 描述：B689 5810-I WHT/BRN STYLE I

Brady Corporation

包装：散装 类别：标签，标志，护栏，标识 标签，贴纸，贴标 - 预印 描述：B689 5810-I WHT/BRN STYLE I

Brady Corporation

Silicon Power Rectifier Diode, 12 Amp

Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls. Features: • High Surge Current Capability • High Voltage Available

文件：24.01 Kbytes 页数：2 Pages

NTE

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

文件：158.63 Kbytes 页数：8 Pages

ALLEGRO

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

文件：158.63 Kbytes 页数：8 Pages

ALLEGRO