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55GN01S

UHF Wide-band Low-noise Amplifier Applications

SANYOSanyo

三洋三洋电机株式会社

55GN01SA

NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

NPNEpitaxialPlanarSiliconTransistor Features •Highcutofffrequency:fT=5.5GHztyp. •Highgain:⏐S21e⏐2=10dBtyp(f=1GHz). •Ultrasmallpackagepermittingappliedsetstobesmallandslim.

SANYOSanyo

三洋三洋电机株式会社

55GN01C

UHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcutofffrequency:fT=5.5GHztyp. •Highgain:|S21e|2=9.5dBtyp(f=1GHz).

SANYOSanyo

三洋三洋电机株式会社

55GN01CA

NPNEpitaxialPlanarSiliconTransistorUHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcutofffrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=9.5dBtyp(f=1GHz)

SANYOSanyo

三洋三洋电机株式会社

55GN01CA

RFTransistor

RFTransistor 10V,70mA,fT=5.5GHz,NPNSingleCP Features •Highcutofffrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=9.5dBtyp(f=1GHz)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01CA

UHFWide-bandLow-noiseAmplifierApplications

SANYOSanyo

三洋三洋电机株式会社

55GN01CA-TB-E

RFTransistor

RFTransistor 10V,70mA,fT=5.5GHz,NPNSingleCP Features •Highcutofffrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=9.5dBtyp(f=1GHz)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01FA

UHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=11dBtyp(f=1GHz) =19dBtyp(f=400MHz) •Ultrasmallpackagepermittingappliedsetstobesmallandslim •Halogenfreecompliance

SANYOSanyo

三洋三洋电机株式会社

55GN01FA

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleSSFP

RFTransistor 10V,70mA,fT=5.5GHz,NPNSingleSSFP Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=11dBtyp(f=1GHz) =19dBtyp(f=400MHz) •Ultrasmallpackagepermittingappliedsetstobesmallandslim •Halogenfreecompliance

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01FA

UHFWide-bandLow-noiseAmplifierApplications

SANYOSanyo

三洋三洋电机株式会社

55GN01M

UHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcutofffrequency:fT=5.5GHztyp. •Highgain:|S21e|2=10dBtyp(f=1GHz).

SANYOSanyo

三洋三洋电机株式会社

55GN01MA

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleMCP

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleMCP Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=10dBtyp(f=1GHz)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01MA

UHFWide-bandLow-noiseAmplifierApplications

SANYOSanyo

三洋三洋电机株式会社

55GN01MA

NPNEpitaxialPlanarSiliconTransistorUHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=10dBtyp(f=1GHz)

SANYOSanyo

三洋三洋电机株式会社

55GN01MA-TL-E

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleMCP

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleMCP Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=10dBtyp(f=1GHz)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01MA-TL-E

RFTransistor

RFTransistor10V,70mA,fT=5.5GHz,NPNSingleMCP Features •Highcut-offfrequency:fT=5.5GHztyp •Highgain:⏐S21e⏐2=10dBtyp(f=1GHz)

ONSEMION Semiconductor

安森美半导体安森美半导体公司

55GN01NA

UHFWide-bandLow-noiseAmplifierApplications

UHFWide-bandLow-noiseAmplifierApplications Features •Highcutofffrequency:fT=5.5GHztyp. •Highgain:⏐S21e⏐2=7dBtyp(f=1GHz). =13dBtyp(f=400MHz).

SANYOSanyo

三洋三洋电机株式会社

详细参数

  • 型号:

    55GN01S

  • 制造商:

    SANYO

  • 制造商全称:

    Sanyo Semicon Device

  • 功能描述:

    UHF Wide-band Low-noise Amplifier Applications

供应商型号品牌批号封装库存备注价格
23+
N/A
64610
正品授权货源可靠
询价
SANYO/三洋
23+
SOT423
50000
全新原装正品现货,支持订货
询价
SANYO
SOT423
608900
原包原标签100%进口原装常备现货!
询价
SANYO/三洋
23+
SOT423
20000
原装正品 欢迎咨询
询价
SANYO/三洋
23+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NCE
2020+
TO-220
44470
公司代理品牌,原装现货超低价清仓!
询价
A
23+
TO-220
10000
公司只做原装正品
询价
A
TO-220
22+
6000
十年配单,只做原装
询价
infineon
2023+
TO-220
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
A
23+
TO-220
8400
专注配单,只做原装进口现货
询价
更多55GN01S供应商 更新时间2024-4-30 11:36:00