HALF-BRIDGE IGBT MTP

Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED™ Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3DBC • Very Low Stray Inductance Design for High Speed Operation • UL E78996 approved

文件：144.17 Kbytes 页数：7 Pages

IRF

Half Bridge IGBT MTP (Warp Speed IGBT), 114 A

文件：138.47 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

“Half Bridge” IGBT MTP, 121 AS

FEATURES • Trench IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • UL approved file E78996 • Designed and qualified for industrial level

文件：198.55 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

“Half Bridge” IGBT MTP, 121 A

FEATURES • Trench IGBT technology • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC) • Very low junction to case thermal resistance • UL approved file E78996 • Designed and qualified for industrial level

文件：199.11 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Full Bridge TrenchStop IGBT, MTP Power Modules

FEATURES • TrenchStop IGBT technology • Positive VCE(on) temperature coefficient • FRED Pt® Gen5 antiparallel diodes with ultrasoft reverse recovery • Low diode VF • Square RBSOA • Very low stray inductance design for high speed operation • UL approved file E78996 • Designed and qualified

文件：532.64 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司