丝印：4R8ACBA；Package：WLCSP22_SOT8086；40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)

1. General description The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron- Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off emode device offering superior performance. 2. Features and benefits • Enhancement mod

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