FMMT2907R

Marking：4P；Package：SOT-23；SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR

FEATURES *Fastswitching COMPLIMENTARYTYPES-FMMT2907-FMMT2222 -FMMT2907A-FMMT2222A PARTMARKINGDETAIL-FMMT2907-2BZ FMMT2907A-2F FMMT2907R-4P

MM1Z5V6

Marking：4P；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PMPB27EPA

Marking：4P；Package：SOT1220；30 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •TrenchMOSFETtechnology •Sidewettableflanksforoptical

SDA2411DN

Marking：4P；Package：DFN1006；Ultra small package: 1.0x0.6x0.5mm

Features ●Ultrasmallpackage:1.0x0.6x0.5mm ●Protectsonedataorpowerline ●Ultralowleakage:nAlevel ●Operatingvoltage:24V ●Lowclampingvoltage ●2-pinleadlesspackage ●Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV

SPHV24-01ETG

Marking：4P；Package：DFN1006；Ultra small package: 1.0x0.6x0.5mm

Features Ultrasmallpackage:1.0x0.6x0.5mm Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:24V Lowclampingvoltage 2-pinleadlesspackage Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV

AU2401P1

Marking：4P；Package：DFN1006-2；1-Line Uni-directional TVS Diode

BAS521

Marking：4P；Package：SMD；HIGH VOLTAGE SWITCHING DIODE

BAV3004W

Marking：4P；Package：SOD-123；Surface mount low leakage diode

BAV35WX

Marking：4P；Package：SOD-323-GW；Fast Switching Diode

CMDZ24L

Marking：4P；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE 250mW, 1.8 THRU 47 VOLTS 짹5 TOLERANCE