N-CHANNEL POWER MOSFET

文件：253.12 Kbytes 页数：7 Pages

UTC

友顺

650V N-Channel MOSFET

FEATURES ❐ Originative New Design ❐ Superior Avalanche Rugged Technology ❐ Robust Gate Oxide Technology ❐ Very Low Intrinsic Capacitances ❐ Excellent Switching Characteristics ❐ Unrivalled Gate Charge : 15 nC (Typ.) ❐ Extended Safe Operating Area ❐ Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ❐

文件：802.69 Kbytes 页数：8 Pages

SEMIHOW

N-channel MOSFET (TO-220F , TO-220)

文件：775.92 Kbytes 页数：7 Pages

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N-Channel Power MOSFET 3.9A, 650V, 3.0廓

文件：325 Kbytes 页数：8 Pages

TAK_CHEONG

德昌电子