Power MOSFET

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丝印：4N60CAD；Package：TO-252-2L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

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丝印：4N60CAMJ；Package：TO-251J-3L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微

丝印：4N60CAMN；Package：TO-251N-3L；4A, 600V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF4N60CAF/K/D/T/MN/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state res

文件：411.7 Kbytes 页数：12 Pages

SILAN

士兰微