4N40L-TMS-T

N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR

MSD4N40

400VN-ChannelMOSFET

MSU4N40

400VN-ChannelMOSFET

MTP4N40E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP4N40E

TMOSPOWERFET4.0AMPERES400VOLTSRDS(on)=1.8OHM

TMOSE-FET™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowith

PHB4N40E

PowerMOStransistorsAvalancheenergyrated

PHP4N40E

PowerMOStransistorsAvalancheenergyrated

PHX4N40E

PowerMOStransistorsAvalancheenergyrated

GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHX4N40Eissupplied

RFM4N40

4A,350Vand400V,2.000Ohm,N-ChannelPowerMOSFETs

TheseareN-channelenhancement-modesilicon-gatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgate-drivepower.These

RFP4N40

N-Channel650V(D-S)MOSFET