HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dua

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FAIRCHILD

仙童半导体

Package：6-SMD，鸥翼；包装：管件 类别：隔离器 光隔离器 - 晶体管，光电输出 描述：OPTOISO 5.3KV TRANS W/BASE 6SMD

ONSEMI

安森美半导体

The 4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38 series combine an AlGaAs infrared emitting diode as the emitter which is optically coupled to a silicon planar phototransistor detector in a plastic DIP6 package with different lead forming options.

Features * High isolation 5000 VRMS * DC input with transistor output * Operating temperature range - 55 °C to 110 °C * RoHS & REACH Compliance * MSL class 1 * UL-approved: UL1577, File No.E492440

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UMW

友台半导体

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Description The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 •

文件：364.72 Kbytes 页数：13 Pages

EVERLIGHT

台湾亿光

6 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

Description The 4N2X, 4N3X, H11AX series contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. Features: • 4N2X series: 4N25, 4N26, 4N27, 4N28 • 4N3X series: 4N35, 4N36, 4N37, 4N38 •

文件：364.72 Kbytes 页数：13 Pages

EVERLIGHT

台湾亿光